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We show a hard induced superconducting gap in a Ge-Si nanowire Josephsontransistor up to in-plane magnetic fields of $250$ mT, an important steptowards creating and detecting Majorana zero modes in this system. A hardinduced gap requires a highly homogeneous tunneling heterointerface between thesuperconducting contacts and the semiconducting nanowire. This is realized byannealing devices at $180$ $^\circ$C during which aluminium inter-diffuses andreplaces the germanium in a section of the nanowire. Next to Al, we find asuperconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and ahigher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectivelyswitch either superconductor to the normal state by tuning the temperature andthe magnetic field and observe that the additional superconductor induces aproximity supercurrent in the semiconducting part of the nanowire even when theAl is in the normal state. In another device where the diffusion of Al renderedthe nanowire completely metallic, a superconductor with a much higher criticaltemperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) isfound. The small size of diffusion-induced superconductors inside nanowires maybe of special interest for applications requiring high magnetic fields inarbitrary direction.

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires