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Spintronic devices operating with pure spin currents represent a new paradigmin nanoelectronics, with higher energy efficiency and lower dissipation ascompared to charge currents. This technology, however, will be viable only ifthe amount of spin current diffusing in a nanochannel can be tuned on demandwhile guaranteeing electrical compatibility with other device elements, towhich it should be integrated in high-density three-dimensional architectures.Here, we address these two crucial milestones and demonstrate that pure spincurrents can effectively propagate in metallic nanochannels with athree-dimensional curved geometry. Remarkably, the geometric design of thenanochannels can be used to reach an independent tuning of spin transport andcharge transport characteristics. These results put the foundation for thedesign of efficient pure spin current based electronics, which can beintegrated in complex three-dimensional architectures.

Independent geometrical control of spin and charge resistances in curved spintronics