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We report a method for growing rectangular InAs nanofins with deterministiclength, width and height by dielectric-templated selective-area epitaxy. Thesefreestanding nanofins can be transferred to lay flat on a separate substratefor device fabrication. A key goal was to regain a spatial dimension for devicedesign compared to nanowires, whilst retaining the benefits of bottom-upepitaxial growth. The transferred nanofins were made into devices featuringmultiple contacts for Hall effect and four-terminal resistance studies, as wellas a global back-gate and nanoscale local top-gates for density control. Hallstudies give a 3D electron density $2.5~-~5 \times 10^{17}$ cm$^{-3}$,corresponding to an approximate surface accumulation layer density $3~-~6\times 10^{12}$ cm$^{-2}$ that agrees well with previous studies of InAsnanowires. We obtain Hall mobilities as high as $1200$ cm$^{2}$/Vs,field-effect mobilities as high as $4400$ cm$^{2}$/Vs and clear quantuminterference structure at temperatures as high as $20$ K. Our devices showexcellent prospects for fabrication into more complicated devices featuringmultiple ohmic contacts, local gates and possibly other functional elements,e.g., patterned superconductor contacts, that may make them attractive optionsfor future quantum information applications.

Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy