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Quantum anomalous Hall effect(QAHE) can only be realized at extremely lowtemperatures in magnetically doped topological insulators(TIs) due tolimitations inherent with the doping precess. In an effort to boost thequantization temperature of QAHE, magnetic proximity effect in magneticinsulator/TI heterostructures has been extensively investigated. However, theobserved anomalous Hall resistance has never been more than several Ohms,presumably owing to the interfacial disorders caused by the structural andchemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3(BST) thinfilms on structurally and chemically well-matched, ferromagnetic-insulatingCeGeTe3(CGT) substrates, the proximity-induced anomalous Hall resistance can beenhanced by more than an order of magnitude. This sheds light on the importanceof structural and chemical match for magnetic insulator/TI proximity systems.

Record-High Proximity-Induced Anomalous Hall Effect in (Bi$_x$Sb$_{1-x}$)2Te$_3$ Thin Film Grown on CrGeTe$_3$ Substrate