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While the properties of wurtzite GaAs have been extensively studied duringthe past decade, little is known about the influence of the crystal polytype onternary (In,Ga)As quantum well structures. We address this question with aunique combination of correlated, spatially-resolved measurement techniques oncore-shell nanowires that contain extended segments of both the zincblende andwurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals ablueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzitepolytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable$\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry toreveal two comparable contributions to this shift. First, there is a 30% dropin In mole fraction going from the zincblende to the wurtzite segment. Second,the quantum well is under compressive strain, which has a much stronger impacton the hole ground state in the wurtzite than in the zincblende segment. Ourresults highlight the role of the crystal structure in tuning the emission of(In,Ga)As quantum wells and pave the way to exploit the possibilities ofthree-dimensional bandgap engineering in core-shell nanowire heterostructures.At the same time, we have demonstrated an advanced characterization toolkit forthe investigation of semiconductor nanostructures.

Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells