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We have performed scanning angle-resolved photoemission spectroscopy with ananometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41,which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4consisting of alternate stacking of the topologically-trivial insulator PbSebilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3.This allows us to visualize a mosaic of topological Dirac states at a nanometerscale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs)that remain on top of the PbSe layer after cleaving the PSBS crystal, becausethe local band structure of topological origin changes drastically with thethickness of the Bi2Se3 nano-islands. A comparison of the local band structurewith that in ultrathin Bi2Se3 films on Si(111) gives us further insights intothe nature of the observed topological states. This result demonstrates thatnano-ARPES is a very useful tool for characterizing topologicalheterostructures.

Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES