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We report on experimental determination of the strain and bandgap of InAsP inepitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires aregrown via metal-organic vapor phase epitaxy. The as-grown nanowires arecharacterized by transmission electron microscopy, X-ray diffraction,micro-photoluminescence ($\mu$PL) spectroscopy and micro-Raman ($\mu$-Raman)spectroscopy measurements. We observe that the core-shell nanowires are ofwurtzite (WZ) crystal phase and are coherently strained, with the core and theshell having the same number of atomic planes in each nanowire. We determinethe predominantly uniaxial strains formed in the core-shell nanowires along thenanowire growth axis and demonstrate that the strains can be described using ananalytical expression. The bandgap energies in the strained WZ InAsP corematerials are extracted from the $\mu$PL measurements of individual core-shellnanowires. The coherently strained core-shell nanowires demonstrated in thiswork offer the potentials for use in constructing novel optoelectronic devicesand for development of piezoelectric photovoltaic devices.

Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires