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Graphene is an excellent material for long distance spin transport but allowslittle spin manipulation. Transition metal dichalcogenides imprint their strongspin-orbit coupling into graphene via proximity effect, and it has beenpredicted that efficient spin-to-charge conversion due to spin Hall andRashba-Edelstein effects could be achieved. Here, by combining Hall probes withferromagnetic electrodes, we unambiguously demonstrate experimentally spin Halleffect in graphene induced by MoS$_2$ proximity and for varying temperature upto room temperature. The fact that spin transport and spin Hall effect occur indifferent parts of the same material gives rise to a hitherto unreportedefficiency for the spin-to-charge voltage output. Remarkably for a singlegraphene/MoS$_2$ heterostructure-based device, we evidence a superimposedspin-to-charge current conversion that can be indistinguishably associated witheither the proximity-induced Rashba-Edelstein effect in graphene or the spinHall effect in MoS$_2$. By comparing our results to theoretical calculations,the latter scenario is found the most plausible one. Our findings pave the waytowards the combination of spin information transport and spin-to-chargeconversion in two-dimensional materials, opening exciting opportunities in avariety of future spintronic applications.

Room temperature spin Hall effect in graphene/MoS$_2$ van der Waals heterostructures