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Atomically thin chromium triiodide (CrI3) has recently been identified as alayered antiferromagnetic insulator, in which adjacent ferromagnetic monolayersare antiferromagnetically coupled. This unusual magnetic structure naturallycomprises a series of anti-aligned spin filters which can be utilized to makespin-filter magnetic tunnel junctions with very large tunnelingmagnetoresistance (TMR). Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure. By varying the gate voltages at fixed magnetic field, the device canbe switched reversibly between bistable magnetic states with the same netmagnetization but drastically different resistance (by a factor of ten ormore). In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.Our work demonstrates new kinds of magnetically moderated transistor action andopens up possibilities for voltage-controlled van der Waals spintronic devices.

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction