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Difficulties in obtaining high-performance p-type transistors and gateinsulator charge-trapping effects present two major challenges for III-Vcomplementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAsnanowire metal-semiconductor field-effect transistor (MESFET) that eliminatesthe need for a gate insulator by exploiting the Schottky barrier at themetal-GaAs interface. Our device beats the best-performing p-GaSb nanowiremetal-oxide-semiconductor field effect transistor (MOSFET), giving a typicalsub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio$\sim 10^{5}$, on-resistance ~700 k$\Omega$, contact resistance ~30 k$\Omega$,peak transconductance 1.2 $\mu$S/$\mu$m and high-fidelity ac operation atfrequencies up to 10 kHz. The device consists of a GaAs nanowire with anundoped core and heavily Be-doped shell. We carefully etch back the nanowire atthe gate locations to obtain Schottky-barrier insulated gates whilst leavingthe doped shell intact at the contacts to obtain low contact resistance. Ourdevice opens a path to all-GaAs nanowire MESFET complementary circuits withsimplified fabrication and improved performance.

p-GaAs nanowire MESFETs with near-thermal limit gating