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The non-destructive characterization of nanoscale devices, such as thosebased on semiconductor nanowires, in terms of functional potentials is crucialfor correlating device properties with their morphological/materials features,as well as for precisely tuning and optimizing their growth process. Electronholographic tomography (EHT) has been used in the past to reconstruct the totalpotential distribution in 3D but hitherto lacked a quantitative approach toseparate potential variations due to chemical composition changes (mean innerpotential - MIP) and space charges. In this letter, we combine and correlateEHT and high-angle annular dark-field scanning transmission electron microscopy(HAADF-STEM) tomography on an individual <111> oriented GaAs-AlGaAscore-multishell nanowire (NW). We obtain excellent agreement between bothmethods in terms of the determined Al concentration within the AlGaAs shell, aswell as thickness variations of the few nanometer thin GaAs shell acting asquantum well tube. Subtracting the MIP determined from the STEM tomogram,enables us to observe functional potentials at the NW surfaces and at the Au-NWinterface, both ascribed to surface/interface pinning of the semiconductorFermi level.

Three-dimensional composition and electric potential mapping of III-V core-multishell nanowires by correlative STEM and holographic tomography