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Single-walled carbon nanotubes are a promising material as quantum lightsources at room temperature and as nanoscale light sources for integratedphotonic circuits on silicon. Here we show that integration of dopant states incarbon nanotubes and silicon microcavities can provide bright and high-puritysingle photon emitters on silicon photonics platform at room temperature. Weperform photoluminescence spectroscopy and observe enhancement of emission fromthe dopant states by a factor of $\sim$100, and cavity-enhanced radiative decayis confirmed using time-resolved measurements, where $\sim$30% decrease ofemission lifetime is observed. Statistics of photons emitted from thecavity-coupled dopant states are investigated by photon correlationmeasurements, and high-purity single photon generation is observed. Excitationpower dependence of photon emission statistics shows that the degree of photonantibunching can be kept low even when the excitation power increases, whilesingle photon emission rate can be increased up to $\sim 1.7 \times 10^7$ Hz.

Enhanced single photon emission from carbon nanotube dopant states coupled to silicon microcavities