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Next-generation, atomically thin devices require in-plane, one-dimensionalheterojunctions to electrically connect different two-dimensional (2D)materials. However, the lattice mismatch between most 2D materials leads tounavoidable strain, dislocations, or ripples, which can strongly affect theirmechanical, optical, and electronic properties. We have developed an approachto map 2D heterojunction lattice and strain profiles with sub-picometerprecision and to identify dislocations and out-of-plane ripples. We collecteddiffraction patterns from a focused electron beam for each real-space scanposition with a high-speed, high dynamic range, momentum-resolved detector -the electron microscope pixel array detector (EMPAD). The resultingfour-dimensional (4D) phase space datasets contain the full spatially resolvedlattice information of the sample. By using this technique on tungstendisulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures, wehave mapped lattice distortions with 0.3 pm precision across multi-micronfields of view and simultaneously observed the dislocations and ripplesresponsible for strain relaxation in 2D laterally-epitaxial structures.

Strain Mapping of Two-Dimensional Heterostructures with Sub-Picometer Precision