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Spin-orbit coupling (SOC) in graphene can be greatly enhanced by proximitycoupling it to transition metal dichalcogenides (TMDs) such as WSe2. We findthat the strength of the acquired SOC in graphene depends on the stacking orderof the heterostructures when using hexagonal boron nitride (h-BN) as thecapping layer, i.e., SiO2/graphene/WSe2/h-BN exhibiting stronger SOC thanSiO2/WSe2/graphene/h-BN. We utilize photoluminescence (PL) as an indicator tocharacterize the interaction between graphene and monolayer WSe2 grown bychemical vapor deposition. We observe much stronger PL quenching in theSiO2/graphene/WSe2/h-BN stack than in the SiO2/WSe2/graphene/h-BN stack, andcorrespondingly a much larger weak antilocalization (WAL) effect or strongerinduced SOC in the former than in the latter. We attribute these two effects tothe interlayer distance between graphene and WSe2, which depends on whethergraphene is in immediate contact with h-BN. Our observations and hypothesis arefurther supported by first-principles calculations which reveal a cleardifference in the interlayer distance between graphene and WSe2 in these twostacks.

Effect of distance on photoluminescence quenching and proximity-induced spin-orbit coupling in graphene-WSe2 heterostructures