English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Layered metal chalcogenide materials provide a versatile platform toinvestigate emergent phenomena and two-dimensional (2D) superconductivityat/near the atomically thin limit. In particular, gate-induced interfacialsuperconductivity realized by the use of an electric-double-layer transistor(EDLT) has greatly extended the capability to electrically inducesuperconductivity in oxides, nitrides and transition metal chalcogenides andenable one to explore new physics, such as the Ising pairing mechanism.Exploiting gate-induced superconductivity in various materials can provide uswith additional platforms to understand emergent interfacial superconductivity.Here, we report the discovery of gate-induced 2D superconductivity in layered1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family,using an EDLT gating geometry. A superconducting transition temperature Tcaround 3.9 K was demonstrated at the EDL interface. The 2D nature of thesuperconductivity therein was further confirmed based on 1) a 2D Tinkhamdescription of the angle-dependent upper critical field, 2) the existence of aquantum creep state as well as a large ratio of the coherence length to thethickness of superconductivity. Interestingly, the in-plane approaching zerotemperature was found to be 2-3 times higher than the Pauli limit, which mightbe related to an electric field-modulated spin-orbit interaction. Such resultsprovide a new perspective to expand the material matrix available forgate-induced 2D superconductivity and the fundamental understanding ofinterfacial superconductivity.

Gate-Induced Interfacial Superconductivity in 1T-SnSe2