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Several semiconductor quantum dot techniques have been investigated for thegeneration of entangled photon pairs. Among the other techniques, dropletepitaxy enables the control of the shape, size, density, and emissionwavelength of the quantum emitters. However, the fraction of theentanglement-ready quantum dots that can be fabricated with this method isstill limited to around 5%, and matching the energy of the entangled photons toatomic transitions (a promising route towards quantum networking) remains anoutstanding challenge.  Here, we overcome these obstacles by introducing a modified approach todroplet epitaxy on a high symmetry (111)A substrate, where the fundamentalcrystallization step is performed at a significantly higher temperature ascompared to previous reports. Our method drastically improves the yield ofentanglement-ready photon sources near the emission wavelength of interest,which can be as high as 95% due to the low values of fine structure splittingand radiative lifetime, together with the reduced exciton dephasing offered bythe choice of GaAs/AlGaAs materials. The quantum dots are designed to emit inthe operating spectral region of Rb-based slow-light media, providing a viabletechnology for quantum repeater stations.

High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy