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Semiconductor nanowires offer great potential for realizing broadbandphotodetectors that are compatible with silicon technology. However, thespectral range of such detectors has so far been limited to selected regions inthe ultraviolet, visible and near infrared. Here, we report on broadbandnanowire heterostructure array photodetectors exhibiting a photoresponse fromthe visible to long-wavelength infrared. In particular, the infrared responsefrom 3-20 um is enabled by normal incidence excitation of intersubbandtransitions in low-bandgap InAsP quantum discs synthesized axially within InPnanowires. The optical characteristics are explained by the excitation of thelongitudinal component of optical modes in the photonic crystal formed by thenanostructured portion of the detectors, combined with a non-symmetricpotential profile of the discs resulting from synthesis. Our results provide ageneralizable insight into how broadband nanowire photodetectors may bedesigned, and how engineered nanowire heterostructures open up new fascinatingopportunities for optoelectronics.

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared