English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2have attracted much attention recently, particularly because of their type IIband alignments and the formation of interlayer exciton as the lowest-energyexcitonic state. In this work, we calculate the electronic and opticalproperties of such heterostructures with the first-principles GW+Bethe-SalpeterEquation (BSE) method and reveal the important role of interlayer coupling indeciding the excited-state properties, including the band alignment andexcitonic properties. Our calculation shows that due to the interlayercoupling, the low energy excitons can be widely tunable by a vertical gatefield. In particular, the dipole oscillator strength and radiative lifetime ofthe lowest energy exciton in these bilayer heterostructures is varied by overan order of magnitude within a practical external gate field. We also build asimple model that captures the essential physics behind this tunability andallows the extension of the ab initio results to a large range of electricfields. Our work clarifies the physical picture of interlayer excitons inbilayer vdW heterostructures and predicts a wide range of gate-tunableexcited-state properties of 2D optoelectronic devices.

Interlayer coupling and gate-tunable excitons in transition metal dichalcogenide heterostructures