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As a high mobility two-dimensional semiconductor with strong structural andelectronic anisotropy, atomically thin black phosphorus (BP) provides a newplayground for investigating the quantum Hall (QH) effect, includingoutstanding questions such as the functional dependence of Landau level (LL)gaps on magnetic field B, and possible anisotropic fractional QH states. Usingencapsulating few-layer BP transistors with mobility up to 55,000 cm2/Vs, weextract LL gaps over an exceptionally wide range of B for QH states at fillingfactors {\nu}=-1 to -4, which are determined to be linear in B, thus resolvinga controversy raised by its anisotropy. Furthermore, a fractional QH state at{\nu}~ -4/3 and an additional feature at -0.56+/- 0.1 are observed,underscoring BP as a tunable 2D platform for exploring electron interactions.

Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors