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The discovery of intriguing properties related to the Dirac states ingraphene has spurred huge interest in exploring its two-dimensional group-IVcounterparts, such as silicene, germanene, and stanene. However, thesematerials have to be obtained via synthesizing on substrates with stronginterfacial interactions, which usually destroy their intrinsic$\pi$($p_z$)-orbital Dirac states. Here we report a theoretical study on theexistence of Dirac states arising from the $p_{x,y}$ orbitals instead of $p_z$orbitals in silicene on 4H-SiC(0001), which survive in spite of the stronginterfacial interactions. We also show that the exchange field together withthe spin-orbital coupling give rise to a detectable band gap of 1.3 meV. Berrycurvature calculations demonstrate the nontrivial topological nature of suchDirac states with a Chern number $C = 2$, presenting the potential of realizingquantum anomalous Hall effect for silicene on SiC(0001). Finally, we constructa minimal effective model to capture the low-energy physics of this system.This finding is expected to be also applicable to germanene and stanene, andimply great application potentials in nanoelectronics.

Topological Dirac states beyond $\pi$ orbitals for silicene on SiC(0001) surface