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Active control of light-matter interactions in semiconductors is critical forrealizing next generation optoelectronic devices, with tunable control of thesystems optical properties via external fields. The ability to manipulateoptical interactions in active materials coupled to cavities via geometricalparameters, which are fixed along with dynamic control with applied fieldsopens up possibilities of controlling exciton lifetimes, oscillator strengthsand their relaxation properties. Here, we demonstrate electrical control ofexciton-plasmon polariton coupling strength of a two-dimensional semiconductorintegrated with plasmonic nanoresonators assembled in a field-effect transistordevice between strong and weak coupling limits by electrostatic doping. As aresult, the exciton-plasmon polarion dispersion can be altered dynamically withapplied electric field by modulating the excitonic properties of monolayer MoS2arising from many-body effects with carrier concentration. In addition, strongcoupling between charged excitons plasmons was also observed upon increasedcarrier injection. The ability to dynamically control the optical properties ofan ultra-thin semiconductor with plasmonic nanoresonators and electric fieldsdemonstrates the versatility of the coupled system and offers a new platformfor the design of optoelectronic devices with precisely tailored responses.

Electrical tuning of exciton-plasmon polariton coupling in monolayer MoS2 integrated with plasmonic nanoantenna lattice