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The extreme mechanical resilience of graphene and the peculiar coupling ithosts between lattice and electronic degrees of freedom have spawned a strongimpetus towards strain-engineered graphene where, on the one hand, strainaugments the richness of its phenomenology and makes possible new concepts forelectronic devices and, on the other hand, new and extreme physics might takeplace. Here, we demonstrate that the shape of substrates supporting graphenesheets can be optimized for approachable experiments where strain-inducedpseudomagnetic fields (PMF) can be tailored by pressure for directionallyselective electronic transmission and pinching-off of current flow down to thequantum channel limit. The Corbino-type layout explored here furthermore allowsfiltering of charge carriers according to valley and current direction, whichcan be used to inject or collect valley-polarized currents, thus realizing oneof the basic elements required for valleytronics. Our results are based on aframework developed to realistically determine the combination of strain,external parameters, and geometry optimally compatible with the target spatialprofile of a desired physical property --- the PMF in this case. Characteristicconductance profiles are analyzed through quantum transport calculations onlarge graphene devices having the optimal shape.

Quantized transport, strain-induced perfectly conducting modes and valley filtering on shape-optimized graphene Corbino devices