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We demonstrate gate-tunable resonant tunneling and negative differentialresistance between two rotationally aligned bilayer graphene sheets separatedby bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperatureand 1.5 K, respectively, values that are comparable to epitaxially grownresonant tunneling heterostructures. An excellent agreement between theoreticalcalculations using a Lorentzian spectral function for the two-dimensional (2D)quasiparticle states, and the experimental data indicates that the interlayercurrent stems primarily from energy and in-plane momentum conserving 2D-2Dtunneling, with minimal contributions from inelastic or non-momentum-conservingtunneling. We demonstrate narrow tunneling resonances with intrinsichalf-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures