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Chip-scale integrated light sources are a crucial component in a broad rangeof photonics applications. III-V semiconductor nanowire emitters have gainedattention as a fascinating approach due to their superior material properties,extremely compact size, and the capability to grow directly onlattice-mismatched silicon substrates. Although there have been remarkableadvances in nanowire-based emitters, their practical applications are still inthe early stages due to the difficulties in integrating nanowire emitters withphotonic integrated circuits (PICs). Here, we demonstrate for the first timeoptically pumped III-V nanowire array lasers monolithically integrated onsilicon-on-insulator (SOI) platform. Selective-area growth of purelysingle-crystalline InGaAs/InGaP core/shell nanowires on an SOI substrateenables the nanowire array to form a photonic crystal nanobeam cavity withsuperior optical and structural properties, resulting in the laser to operateat room temperature. We also show that the nanowire array lasers areeffectively coupled with SOI waveguides by employing nanoepitaxy on apre-patterned SOI platform. These results represent a new platform forultra-compact and energy-efficient optical links, and unambiguously point theway toward practical and functional nanowire lasers.

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature