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We propose a two-dimensional crystal which possesses low indirect band gapsof 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilitiessimilar to those of phosphorene: GeP3. GeP3 has a stable three-dimensionallayered bulk counterpart which is metallic and is known from experiment since1970. It has a small cleavage energy, which suggests exfoliation of bulkmaterial as viable means for the preparation of mono- and few-layer materials.The material shows strong interlayer quantum confinement effects, resulting ina band gap reduction from mono- to bilayer, and then to a semiconductor-metaltransition between bi- and triple layer. Under biaxial strain, the indirectband gap can be turned into a direct one. Pronounced light absorption in thespectral range from ~600 to 1400 nm is predicted for monolayer and bilayer andpromises applications in photovoltaics.

GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement