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Helium-ion beams (HIB) focused to sub-nanometer scales have emerged aspowerful tools for high-resolution imaging as well as nano-scale lithography,ion milling or deposition. Quantifying irradiation effects is essential forreliable device fabrication but most of the depth profiling information isprovided by computer simulations rather than experiment. Here, we use atomicforce microscopy (AFM) combined with scanning near-field optical microscopy(SNOM) to provide three-dimensional (3D) dielectric characterization ofhigh-temperature superconductor devices fabricated by HIB. By imaging theinfrared dielectric response we find that amorphization caused by the nominally0.5 nm HIB extends throughout the entire 26.5 nm thickness of the cuprate filmand by about 500 nm laterally. This unexpectedly widespread structural andelectronic damage can be attributed to a Helium depth distributionsubstantially modified by internal device interfaces. Our study introducesAFM-SNOM as a quantitative nano-scale tomographic technique for non-invasive 3Dcharacterization of irradiation damage in a wide variety of devices.

Optical Nanoscopy of High-Tc Cuprate Nano-Constriction Devices Patterned by Helium Ion Beams