English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report results of investigation of the low-frequency electronic excessnoise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers.Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionallyhigh breakdown current density. It was found that TaSe3 nanowires have lowerlevels of the normalized noise spectral density, compared to carbon nanotubesand graphene. The temperature-dependent measurements revealed that thelow-frequency electronic 1/f noise becomes the 1/f^2-type as temperatureincreases to about 400 K, suggesting the onset of electromigration (f is thefrequency). Using the Dutta- Horn random fluctuation model of the electronicnoise in metals we determined that the noise activation energy for quasi-1DTaSe3 nanowires is approximately E_P=1.0 eV. In the framework of the empiricalnoise model for metallic interconnects, the extracted activation energy,related to electromigration, is E_A=0.88 eV, consistent with that for Cu and Alinterconnects. Our results shed light on the physical mechanism oflow-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest thatsuch material systems have potential for ultimately downscaled localinterconnect applications.

Low-Frequency Electronic Noise in Exfoliated Quasi-1D TaSe3 van Der Waals Nanowires