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Future multi-functional hybrid devices might combine switchable molecules and2D material-based devices. Spin-crossover compounds are of particular interestin this context since they exhibit bistability and memory effects at roomtemperature while responding to numerous external stimuli. Atomically-thin 2Dmaterials such as graphene attract a lot of attention for their fascinatingelectrical, optical, and mechanical properties, but also for their reliabilityfor room-temperature operations. Here, we demonstrate that thermally-inducedspin-state switching of spin-crossover nanoparticle thin films can be monitoredthrough the electrical transport properties of graphene lying underneath thefilms. Model calculations indicate that the charge carrier scattering mechanismin graphene is sensitive to the spin-state dependence of the relativedielectric constants of the spin-crossover nanoparticles. This graphene sensorapproach can be applied to a wide class of (molecular) systems with tunableelectronic polarizabilities.

Phase-transitions in spin-crossover thin films probed by graphene transport measurements