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Transition metal pentatelluride ZrTe5 is a versatile material incondensed-matter physics and has been intensively studied since the 1980s. Themost fascinating feature of ZrTe5 is that it is a 3D Dirac semimetal which haslinear energy dispersion in all three dimensions in momentum space.Structure-wise, ZrTe5 is a layered material held together by weak interlayervan der Waals force. The combination of its unique band structure and 2D atomicstructure provides a fertile ground for more potential exotic physicalphenomena in ZrTe5 related to 3D Dirac semimentals. However the physicalproperties of its few-layer form have yet to be thoroughly explored. Here wereport strong optical and electrical in-plane anisotropy of mechanicallyexfoliated few-layer ZrTe5. Raman spectroscopy shows significant intensitychange with sample orientations, and the behavior of angle-resolved phononmodes at the gamma point is explained by theoretical calculation. DCconductance measurement indicates a 50% of difference along different in-planedirections. The diminishing of resistivity anomaly in few-layer samplesindicates the evolution of band structure with reduced thickness.Low-temperature Hall experiment sheds lights on more intrinsic anisotropicelectrical transport, with hole mobility of 3,000 and 1,500 cm2/Vs along a-axisand c-axis respectively. Pronounced quantum oscillations in magneto-resistanceare observed at low temperatures with highest electron mobility up to 44,000cm2/Vs.

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5