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We demonstrate the continuous and reversible tuning of the optical band gapof suspended monolayer MoS2 membranes by as much as 500 meV by applying verylarge biaxial strains. By using chemical vapor deposition (CVD) to growcrystals that are highly impermeable to gas, we are able to apply a pressuredifference across suspended membranes to induce biaxial strains. We observe theeffect of strain on the energy and intensity of the peaks in thephotoluminescence (PL) spectrum, and find a linear tuning rate of the opticalband gap of 99 meV/%. This method is then used to study the PL spectra ofbilayer and trilayer devices under strain, and to find the shift rates andGr\"uneisen parameters of two Raman modes in monolayer MoS2. Finally, we usethis result to show that we can apply biaxial strains as large as 5.6% acrossmicron sized areas, and report evidence for the strain tuning of higher leveloptical transitions.

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2