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We investigate the distribution and temperature-dependent optical propertiesof sharp, zero-phonon emission from defect-based single photon sources inmultilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emissionlines from optically active defects distributed across an energy range thatexceeds 500 meV. Spectrally-resolved photon-correlation measurements verifysingle photon emission, even when multiple emission lines are simultaneouslyexcited within the same h-BN flake. We also present a detailed study of thetemperature-dependent linewidth, spectral energy shift, and intensity for twodifferent zero-phonon lines centered at 575 nm and 682 nm, which reveals anearly identical temperature dependence despite a large difference intransition energy. Our temperature-dependent results are best described by alattice vibration model that considers piezoelectric coupling to in-planephonons. Finally, polarization spectroscopy measurements suggest that whereasthe 575 nm emission line is directly excited by 532 nm excitation, the 682 nmline is excited indirectly.

Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride