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We demonstrate near unity, broadband absorbing optoelectronic devices usingsub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum andtungsten as van der Waals semiconductor active layers. Specifically, we reportthat near-unity light absorption is possible in extremely thin (< 15 nm) Vander Waals semiconductor structures by coupling to strongly damped optical modesof semiconductor/metal heterostructures. We further fabricate Schottky junctiondevices using these highly absorbing heterostructures and characterize theiroptoelectronic performance. Our work addresses one of the key criteria toenable TMDCs as potential candidates to achieve high optoelectronic efficiency.

Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics