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Controllable doping of two-dimensional materials is highly desired for idealdevice performance in both hetero- and p-n homo-junctions. Herein, we proposean effective strategy for doping of MoS2 with nitrogen through a remote N2plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2plasma exposure using in-situ X-ray photoelectron spectroscopy, we identifiedthe presence of covalently bonded nitrogen in MoS2, where substitution of thechalcogen sulfur by nitrogen is determined as the doping mechanism.Furthermore, the electrical characterization demonstrates that p-type doping ofMoS2 is achieved by nitrogen doping, in agreement with theoretical predictions.Notably, we found that the presence of nitrogen can induce compressive strainin the MoS2 structure, which represents the first evidence of strain induced bysubstitutional doping in a transition metal dichalcogenide material. Finally,our first principle calculations support the experimental demonstration of suchstrain, and a correlation between nitrogen doping concentration and compressivestrain in MoS2 is elucidated.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure