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Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topologicalinsulators (TIs) exhibit exotic quantum phenomena. For optimal characterizationof these phenomena, it is desirable to control the interface structure duringfilm growth on such TIs. In this process, adatom mobility is a key factor. Wedemonstrate that Pb mobility on the Bi$_{2}$Te$_{3}$(111) surface can bemodified by the engineering local strain, {\epsilon}, which is induced aroundthe point-like defects intrinsically forming in the Bi$_{2}$Te$_{3}$(111) thinfilm grown on a Si(111)-7 $\times$ 7 substrate. Scanning tunneling microscopyobservations of Pb adatom and cluster distributions and first-principlesdensity functional theory (DFT) analyses of the adsorption energy and diffusionbarrier E$_{d}$ of Pb adatom on Bi$_{2}$Te$_{3}$(111) surface show asignificant influence of {\epsilon}. Surprisingly, E$_d$ reveals a cusp-likedependence on {\epsilon} due to a bifurcation in the position of the stableadsorption site at the critical tensile strain {\epsilon}$_{c}$ $ \approx $0.8%. This constitutes a very different strain-dependence of diffusivity fromall previous studies focusing on conventional metal or semiconductor surfaces.Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversibleaggregation incorporating the DFT results reveal adatom and clusterdistributions compatible with our experimental observations.

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3