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Ferroelectric tunnel junctions (FTJs) have attracted increasing researchinterest as a promising candidate for non-volatile memories. Recently,significant enhancements of tunneling electroresistance (TER) have beenrealized through modifications of electrode materials. However, direct controlof the FTJ performance through modifying the tunneling barrier has not beenadequately explored. Here, adding a new direction to FTJ research, wefabricated FTJs with BaTiO3 single barriers (SB-FTJs) and BaTiO3/SrTiO3composite barriers (CB-FTJs), and reported a systematic study of FTJperformances by varying the barrier thicknesses and compositions. For theSB-FTJs, the TER is limited by pronounced leakage current for ultrathinbarriers and extremely small tunneling current for thick barriers. For theCB-FTJs, the extra SrTiO3 barrier provides an additional degree of freedom tomodulate the barrier potential and tunneling behavior. The resultant hightunability can be utilized to overcome the barrier thickness limits and enhancethe overall CB-FTJ performances beyond those of SB-FTJ. Our results reveal anew paradigm to manipulate the FTJs through designing multilayer tunnelingbarriers with hybrid functionalities.

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers