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Electrical control of spin signals and long distance spin transport are majorrequirements in the field of spin electronics. Here we report the efficientguiding of spin currents at room temperature in high mobility hexagonal boronnitride encapsulated bilayer graphene using carrier drift. Our experiments,together with modelling, show that the spin relaxation length can be tuned from2 to 88 micrometers when applying a DC current of $\mp$40 uA respectively. Ourmodel predicts that, extending the range up to $\mathrm{I_{dc}}=\mp$150 uA, thespin relaxation length can be tuned from 0.6 to 320 um respectively, indicatingthat spin relaxation lengths in the millimeter range are within scope in nearfuture with moderate current densities. Our results also show that we are ableto direct spin currents on either side of a spin injection contact. 98% of theinjected spins flow to the left when $\mathrm{I_{dc}}$= -40 uA and 65% flow tothe right when the drift current is reversed. Our model shows that, for$\mathrm{I_{dc}}=\mp$150 uA the numbers reach 99.8% and 95% respectivelyshowing the potential of carrier drift for spin-based logic operations anddevices.

98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift