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We show spin lifetimes of 12.6 ns and spin diffusion lengths as long as 30.5\mu m in single layer graphene non-local spin transport devices at roomtemperature. This is accomplished by the fabrication of Co/MgO-electrodes on aSi/SiO$_2$ substrate and the subsequent dry transfer of a graphene-hBN-stack ontop of this electrode structure where a large hBN flake is needed in order todiminish the ingress of solvents along the hBN-to-substrate interface.Interestingly, long spin lifetimes are observed despite the fact that bothconductive scanning force microscopy and contact resistance measurements revealthe existence of conducting pinholes throughout the MgO spininjection/detection barriers. The observed enhancement of the spin lifetime insingle layer graphene by a factor of 6 compared to previous devices exceedscurrent models of contact-induced spin relaxation which paves the way towardsprobing intrinsic spin properties of graphene.

Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices