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We report a new strategy for fabricating 2D/2D low-resistance ohmic contactsfor a variety of transition metal dichalcogenides (TMDs) using van der Waalsassembly of substitutionally doped TMDs as drain/source contacts and TMDs withno intentional doping as channel materials. We demonstrate that few-layer WSe2field-effect transistors (FETs) with 2D/2D contacts exhibit low contactresistances of ~ 0.3 k ohm.um, high on/off ratios up to > 109, and high drivecurrents exceeding 320 uA um-1. These favorable characteristics are combinedwith a two-terminal field-effect hole mobility ~ 2x102 cm2 V-1 s-1 at roomtemperature, which increases to >2x103 cm2 V-1 s-1 at cryogenic temperatures.We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drainand source contacts. The 2D/2D low-resistance ohmic contacts presented hererepresent a new device paradigm that overcomes a significant bottleneck in theperformance of TMDs and a wide variety of other 2D materials as the channelmaterials in post-silicon electronics.

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors