English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigate the ultralow-frequency Raman response of atomically thin ReS2,a special type of two-dimensional (2D) semiconductors with unique distorted 1Tstructure. Bilayer and few-layer ReS2 exhibit rich Raman spectra at frequenciesbelow 50 cm-1, where a panoply of interlayer shear and breathing modes areobserved. The emergence of these interlayer phonon modes indicate that the ReS2layers are coupled and stacked orderly, in contrast to the general belief thatthe ReS2 layers are decoupled from one another. While the interlayer breathingmodes can be described by a linear chain model as in other 2D layered crystals,the shear modes exhibit distinctive behavior due to the in-plane latticedistortion. In particular, the two shear modes in bilayer ReS2 arenon-degenerate and well separated in the Raman spectrum, in contrast to thedoubly degenerate shear modes in other 2D materials. By carrying outcomprehensive first-principles calculations, we can account for the frequencyand Raman intensity of the interlayer modes, and determine the stacking orderin bilayer ReS2.

Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy