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Since the discovery of two-dimensional electron gas (2DEG) at the oxideinterface of LaAlO3/SrTiO3, improving carrier mobility has become an importantissue for device applications. In this paper, by using an alternate polarperovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing latticemismatch from 3.0% to 1.0%, the low-temperature carrier mobility has beenincreased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses forthe LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance ofthe 2DEG, the other at 12 unit cell for a peak in the carrier mobility. Bycontrast, the conducting (110) and (111) LSAT/STO interfaces only show a singlecritical thickness of 8 unit cells. This can be explained in terms of polarfluctuation arising from LSAT chemical composition. In addition to latticemismatch and crystal symmetry at the interface, polar fluctuation arising fromcomposition has been identified as an important variable to be tailored at theoxide interfaces to optimise the 2DEG transport.

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces