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Electrical transport in monolayer graphene on SrTiO3 (STO) thin film isexamined in order to promote gate-voltage scaling using a high-k dielectricmaterial. The atomically flat surface of thin STO layer epitaxially grown onNb-doped STO single-crystal substrate offers good adhesion between the high-kfilm and graphene, resulting in nonhysteretic conductance as a function of gatevoltage at all temperatures down to 2 K. The two-terminal conductancequantization under magnetic fields corresponding to quantum Hall statessurvives up to 200 K at a magnetic field of 14 T. In addition, the substantialshift of charge neutrality point in graphene seems to correlate with thetemperature-dependent dielectric constant of the STO thin film, and itseffective dielectric properties could be deduced from the universality ofquantum phenomena in graphene. Our experimental data prove that the operatingvoltage reduction can be successfully realized due to the underlying high-k STOthin film, without any noticeable degradation of graphene device performance.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film