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Nanoscale control of charge doping in two-dimensional (2D) materials permitsthe realization of electronic analogs of optical phenomena, relativisticphysics at low energies, and technologically promising nanoelectronics.Electrostatic gating and chemical doping are the two most common methods toachieve local control of such doping. However, these approaches suffer fromcomplicated fabrication processes that introduce contamination, change materialproperties irreversibly, and lack flexible pattern control. Here we demonstratea clean, simple, and reversible technique that permits writing, reading, anderasing of doping patterns for 2D materials at the nanometer scale. Weaccomplish this by employing a graphene/boron nitride (BN) heterostructure thatis equipped with a bottom gate electrode. By using electron transport andscanning tunneling microscopy (STM), we demonstrate that spatial control ofcharge doping can be realized with the application of either light or STM tipvoltage excitations in conjunction with a gate electric field. Ourstraightforward and novel technique provides a new path towards on-demandgraphene pn junctions and ultra-thin memory devices.

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures