English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present results on photoexcited carrier lifetimes in few-layer transitionmetal dichalcogenide MoS2 using nondegenerate ultrafast optical pump-probetechnique. Our results show a sharp increase of the carrier lifetimes with thenumber of layers in the sample. Carrier lifetimes increase from few tens ofpicoseconds in monolayer samples to more than a nanosecond in 10-layer samples.The inverse carrier lifetime was found to scale according to the probability ofthe carriers being present at the surface layers, as given by the carrierwavefunction in few layer samples, which can be treated as quantum wells. Thecarrier lifetimes were found to be largely independent of the temperature andthe inverse carrier lifetimes scaled linearly with the photoexcited carrierdensity. These observations are consistent with defect-assisted carrierrecombination, in which the capture of electrons and holes by defects occursvia Auger scatterings. Our results suggest that carrier lifetimes in few-layersamples are surface recombination limited due to the much larger defectdensities at the surface layers compared to the inner layers.

Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS2