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Graphene and other two-dimensional (2D) materials have emerged as promisingmaterials for broadband and ultrafast photodetection and optical modulation.These optoelectronic capabilities can augment complementarymetal-oxide-semiconductor (CMOS) devices for high-speed and low-power opticalinterconnects. Here, we demonstrate an on-chip ultrafast photodetector based ona two-dimensional heterostructure consisting of high-quality grapheneencapsulated in hexagonal boron nitride. Coupled to the optical mode of asilicon waveguide, this 2D heterostructure-based photodetector exhibits amaximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-offat 42 GHz. From photocurrent measurements as a function of the top-gate andsource-drain voltages, we conclude that the photoresponse is consistent withhot electron mediated effects. At moderate peak powers above 50 mW, we observea saturating photocurrent consistent with the mechanisms of electron-phononsupercollision cooling. This nonlinear photoresponse enables optical on-chipautocorrelation measurements with picosecond-scale timing resolution andexceptionally low peak powers.

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit