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Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, whichdisplay Dirac points with linear dispersion in k-space, stabilized by crystalsymmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and weresubsequently demonstrated by photoemission experiments. As unveiled bytransport measurements, several exotic phases, such as Weyl semimetals,topological insulators, and topological superconductors, can be deduced bybreaking time reversal or inversion symmetry. Here, we reported a facile andscalable chemical vapor deposition method to fabricate high-quality Diracsemimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinaryfeatures are attributed to the suppression of electron backscattering. Thisresearch opens a new avenue for the scalable fabrication of Cd3As2 materialstowards exciting electronic applications of 3D Dirac semimetals.

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts