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Electrostatic modification of functional materials by electrolytic gating hasdemonstrated a remarkably wide range of density modulation, a condition crucialfor developing novel electronic phases in systems ranging from complex oxidesto layered chalcogenides. Yet little is known microscopically when carriers aremodulated in electrolyte-gated electric double-layer transistors (EDLTs) due tothe technical challenge of imaging the buried electrolyte-semiconductorinterface. Here, we demonstrate the real-space mapping of the channelconductance in ZnO EDLTs using a cryogenic microwave impedance microscope. Aspin-coated ionic gel layer with typical thicknesses below 50 nm allows us toperform high resolution (on the order of 100 nm) sub-surface imaging, whilemaintaining the capability of inducing the metal-insulator transition under agate bias. The microwave images vividly show the spatial evolution of channelconductance and its local fluctuations through the transition, as well as theuneven conductance distribution established by a large source-drain bias. Theunique combination of ultra-thin ion-gel gating and microwave imaging offers anew opportunity to study the local transport and mesoscopic electronicproperties in EDLTs.

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors