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Access to charge transport through Dirac surface states in topological insulators (TIs) can be challenging due to their intermixing with bulk states or nontopological two-dimensional electron gas (2DEG) quantum well states caused by bending of electronic bands near the surface. The band bending arises via charge transfer from surface adatoms or interfaces and, therefore, the choice of layers abutting topological surfaces is critical. Here we report molecular beam epitaxial growth of Bi2Se3/ZnxCd1-xSe superlattices that hold only one topological surface channel per TI layer. The topological nature of conducting channels is supported by π-Berry phase evident from observed Shubnikov de Haas quantum oscillations and by the associated two-dimensional (2D) weak antilocalization quantum interference correction to magnetoresistance. Both density functional theory (DFT) calculations and transport measurements suggest that a single topological Dirac cone per TI layer can be realized by asymmetric interfaces: Se-terminated ZnxCd1-xSe interface with the TI remains "electronically intact", while charge transfer occurs at the Zn-terminated interface. Our findings indicate that topological transport could be controlled by adjusting charge transfer from nontopological spacers in hybrid structures.

Robust Topological Interfaces and Charge Transfer in Epitaxial Bi2Se3/II–VI Semiconductor Superlattices

Robust Topological Interfaces and Charge Transfer in Epitaxial Bi₂Se₃/II–VI Semiconductor Superlattices