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Semiconducting nanowires (NWs) are a versatile, highly tunable materialplatform at the heart of many new developments in nanoscale and quantumphysics. Here, we demonstrate charge pumping, i.e., the controlled transport ofindividual electrons through an InAs NW quantum dot (QD) device at frequenciesup to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series oflocal bottom gates in a state of the art device geometry. A periodic modulationof a single gate is enough to obtain a dc current proportional to the frequencyof the modulation. The dc bias, the modulation amplitude and the gate voltageson the local gates can be used to control the number of charges conveyed percycle. Charge pumping in InAs NWs is relevant not only in metrology as acurrent standard, but also opens up the opportunity to investigate a variety ofexotic states of matter, e.g. Majorana modes, by single electron spectroscopyand correlation experiments.

Giga-Hertz quantized charge pumping in bottom gate defined InAs nanowire quantum dots