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Graphene opens up for novel optoelectronic applications thanks to its highcarrier mobility, ultra-large absorption bandwidth, and extremely fast materialresponse. In particular, the opportunity to control optoelectronic propertiesthrough tuning of Fermi level enables electro-optical modulation,optical-optical switching, and other optoelectronics applications. However,achieving a high modulation depth remains a challenge because of the modestgraphene-light interaction in the graphene-silicon devices, typically,utilizing only a monolayer or few layers of graphene. Here, we comprehensivelystudy the interaction between graphene and a microring resonator, and itsinfluence on the optical modulation depth. We demonstrate graphene-siliconmicroring devices showing a high modulation depth of 12.5 dB with a relativelylow bias voltage of 8.8 V. On-off electro-optical switching with an extinctionratio of 3.8 dB is successfully demonstrated by applying a square-waveform witha 4 V peak-to-peak voltage.

Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator