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Indium (In) doping in topological crystalline insulator SnTe inducessuperconductivity, making In-doped SnTe a candidate for a topologicalsuperconductor. SnTe nanostructures offer well-defined nanoscale morphology andhigh surface-to-volume ratios to enhance surface effects. Here, we studyIn-doped SnTe nanoplates, InxSn1-xTe, with x ranging from 0 to 0.1 and showthey superconduct. More importantly, we show that In doping reduces the bulkmobility of InxSn1-xTe such that the surface states are revealed inmagnetotransport despite the high bulk carrier density. This is manifested bytwo-dimensional linear magnetoresistance in high magnetic fields, which isindependent of temperature up to 10 K. Aging experiments show that the linearmagnetoresistance is sensitive to ambient conditions, further confirming itssurface origin. We also show that the weak antilocalization observed inInxSn1-xTe nanoplates is a bulk effect. Thus, we show that nanostructures andreducing the bulk mobility are effective strategies to reveal the surfacestates and test for topological superconductors.

Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility